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ApplicationHigh breakdown voltage: VDSS = −180 VHigh forward transfer admittance: |Yfs| = 0.7 S (typ.)Complementary to 2SK2013Specifications Characteristics Symbol Ratings Unit Drain-Source Voltage VDSS −180 V Gate-Source Voltage VGSS ±20 V Drain current (Note 1)...

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2SJ313: ApplicationHigh breakdown voltage: VDSS = −180 VHigh forward transfer admittance: |Yfs| = 0.7 S (typ.)Complementary to 2SK2013Specifications Characteristics Symbol Ratings Unit Drai...

2SJ313 Data Sheet

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Part Number:: 2SJ313
Supply Ability:: 5000

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Upload time: 2025/3/13

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Product Details

Description

Application

High breakdown voltage: V_DSS = −180 V
High forward transfer admittance: |Yfs| = 0.7 S (typ.)
Complementary to 2SK2013

Specifications

Characteristics	Symbol	Ratings	Unit
Drain-Source Voltage	V_DSS	−180	V
Gate-Source Voltage	V_GSS	±20	V
Drain current (Note 1)	I_D	−1	A
Power dissipation (Tc = 25°C)	P_D	25	W
Channel Temperature	T_ch	150
Storage temperature range	T_stg	-55~150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating onditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

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2SJ313

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