2SJ306

The 2SJ306 is a kind of MOS field effect power transistor, switching P channel MOS type which is desiged for the very high-speed switching applications. Features of 2SJ306 are:(1)low on-state resistance;(2)very high-speed switching;(3)low-voltage drive;(4)micaless package facilitating mounting.

The absolute maximum ratings of 2SJ306 can be summerized as:(1): drain-source voltage, VDSS is -250 V; (2): gate-source voltage is +/- 30 V; (3): DC drain current, ID is +/- 3.0 A; (5): total power dissipation (Ta is 25) is 25 or 2.0 W; (6): channel temperature, Tch is 150 ; (7): storage temeprature range, tstg is -55 to 150 .

The electrical characteristics of 2SJ306 can be summerized as:(1): gate leakage current, IGSS is +/-10 uA; (2): gate to source cutoff voltage is -1.5 to -2.5 V; (3): drain leakage current, IDSS is -100 uA; (4): input capacitance: 600 pF; (5): output capacitance is 110 pF; (6) reverse transfer chapacitance is 50 pF; (7)fall time is 65 ns and (8)diode forward voltage is -1.0 to -1.5 V. If you want to know more information such as the electrical characteristics about 2SJ306, please download the datasheet in www.seekic.com or www.chinaicmart.com.