Features: · In applications where two NiCd batteries are used to provide 2.4V, two 2SD879s are used.· The charge time is approximately 1 second faster than that of germanium transistors.· Less power dissipation because of low Collector-to- mitter Voltage VCE(sat), permitting more flashes of light ...
2SD879: Features: · In applications where two NiCd batteries are used to provide 2.4V, two 2SD879s are used.· The charge time is approximately 1 second faster than that of germanium transistors.· Less power...
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· In applications where two NiCd batteries are used to provide 2.4V, two 2SD879s are used.
· The charge time is approximately 1 second faster than that of germanium transistors.
· Less power dissipation because of low Collector-to- mitter Voltage VCE(sat), permitting more flashes of light to be emitted.
· Small package and large allowable collector dissipation (TO-92, PC=750mW).
· Large current capacity and highly resistant to breakdown.
· Excellent linearity of hFE in the region from low current to high current.
Parameter |
Symbol |
Conditions |
Ratings |
Unit |
Collector-to-Base Voltage |
VCBO |
30 |
V | |
Collector-to-Emitter Voltage |
VCEX |
20 |
V | |
VCEO |
10 |
V | ||
Emitter-to-Base Voltage |
VEBO |
6 |
V | |
Collector Current |
IC |
3 |
A | |
Collector Current (Pulse) |
ICP |
100ms single pulse |
5 |
A |
Collector Dissipation |
PC |
750 |
mW | |
Junction Temperature |
Tj |
150 |
°C | |
Storage Temperature |
Tstg |
55 to +150 |
°C |