2SD596 DV3

The 2SD596 DV3 is designed as one kind of silicon epitaxial planar transistor that can be used in audio frequency general purpose amplifier applications. 2SD596 DV3 has three points of features:(1)Micro package; (2)Complementary to 2SB624 PNP Transistor; (3)High DC current gain hFE:200TYP.(VCE=1.0 V,IC=100 mA). The absolute maximum ratings of the 2SD596DV3 can be summarized as:(1)Collector-Base Voltage: 30 V;(2)Collector-Emitter Voltage: 25 V;(3)Emitter-Base Voltage: 5 V;(4)Collector Current - Continuous: 700 mA;(5)Collector Dissipation: 200 mW;(6)Junction and Storage Temperature: -55 to 150 .

The electrical characteristics of 2SD596 DV3 can be summarized as:(1)Collector-base breakdown voltage: 30 V;(2)Collector-emitter breakdown voltage: 25 V;(3)Emitter-base breakdown voltage: 5 V;(4)Collector cut-off current: 0.1 A;(5)Emitter cut-off current: 0.1 A;(6)DC current gain: 110 to 400;(7)Collector-emitter saturation voltage: 0.22 to 0.6 V;(8)Base to Emitter voltage: 600 to 700 V;(9)Transition frequency: 170 MHz;(10)Output capacitance: 12 pF. If you want to know more information about the 2SD596 DV3, please download the datasheet in www.seekic.com or www.chinaicmart.com .