2SD596-T1B DV5

The 2SD596-T1B DV5 is designed as one kind of silicon epitaxial planar transistor that can be used in audio frequency general purpose amplifier applications. This device has three points of features:(1)Micro package; (2)Complementary to 2SB624 PNP Transistor; (3)High DC current gain hFE:200TYP.(VCE=1.0 V,IC=100 mA).

The absolute maximum ratings of the 2SD596-T1B DV5 can be summarized as:(1)Collector-Base Voltage: 30 V;(2)Collector-Emitter Voltage: 25 V;(3)Emitter-Base Voltage: 5 V;(4)Collector Current - Continuous: 700 mA;(5)Collector Dissipation: 200 mW;(6)Junction and Storage Temperature: -55 to 150 .

The electrical characteristics of 2SD596-T1B DV5 can be summarized as:(1)Collector-base breakdown voltage: 30 V;(2)Collector-emitter breakdown voltage: 25 V;(3)Emitter-base breakdown voltage: 5 V;(4)Collector cut-off current: 0.1 A;(5)Emitter cut-off current: 0.1 A;(6)DC current gain: 110 to 400;(7)Collector-emitter saturation voltage: 0.22 to 0.6 V;(8)Base to Emitter voltage: 600 to 700 V;(9)Transition frequency: 170 MHz;(10)Output capacitance: 12 pF. If you want to know more information about the 2SD596-T1B DV5, please download the datasheet in www.seekic.com or www.chinaicmart.com .