2SD2696

      The 2SD2696 is a NPN silicon Epitaxial Type Low frequency transistor (for amplification) designed for Switching.The 2SD2696 has 2 features including The transistor of 400mA class which went only with 2012 size conventionally is attained in 1208 size;Collector saturation voltage is low.VCE (sat) : max. 300mA at IC = 100mA / IB = 2mA.
      The absolute maximun ratings of the 2SD2696 are at Ta=25°C, Collector-Base Voltage VCBO is 30V;Collector-Emitter Voltage VCEO is 30V;Emitter-Base Voltage VEBO is 6 V;Collector Current IC is 400mA;power dissipation is 150mW;Junction temperature is 150°C maxnimum;Storage temperature is -55 to +150°C.
      The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered.Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set.
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