2SD2695

      The 2SD2695 is a Silicon NPN Epitaxial Type (Darlington Power Transistor) designed for Micro Motor Drive, Hammer Drive Applications,Switching Applications,Power Amplifier Applications.The 2SD2695 has 3 features including High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A);Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 1 A, IB = 1 mA);Zener diode included between collector and base.
      The absolute maximun ratings of the 2SD2695 are at Ta=25°C, Collector-Base Voltage VCBO is 50V;Collector-Emitter Voltage VCEO is 60±10V;Emitter-Base Voltage VEBO is 8 V;Collector Current IC is 2A;Collector power dissipation is 0.9W;Junction temperature is 150°C maxnimum;Storage temperature is -55 to +150°C.
      Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
      The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties.The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations.The information contained herein is subject to change without notice.
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