Features: • High speed.• High breakdown voltage(VCBO=1500V).• High reliability(Adoption of HVP process).• Adoption of MBIT process.• On-chip damper diode.PinoutSpecifications Absolute maximum ratings VCBO [V] 1500 VCEO [V] 800 IC [A] 10 PC[...
2SD2688LS: Features: • High speed.• High breakdown voltage(VCBO=1500V).• High reliability(Adoption of HVP process).• Adoption of MBIT process.• On-chip damper diode.PinoutSpecific...
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• High speed.
• High breakdown voltage(VCBO=1500V).
• High reliability(Adoption of HVP process).
• Adoption of MBIT process.
• On-chip damper diode.
Absolute maximum ratings | |
---|---|
VCBO [V] | 1500 |
VCEO [V] | 800 |
IC [A] | 10 |
PC[W] | 35
Tc=25°C |
Electrical characteristics | |
---|---|
hFE min | 5 |
hFE max | 8 |
VCE [V] | 5 |
IC [A] | 8 |
VCE (sat) max [V] | 3 |
IC [A] | 7.2 |
IB [A] | 1.44 |
tf max [µs] | 0.3 |
Parameter | Symbol | Conditions | Ratings | Unit |
---|---|---|---|---|
Collector-to-Base Voltage | VCBO | 1500 | V | |
Collector-to-Emitter Voltage | VCEO | 800 | V | |
Emitter-to-Base Voltage | VEBO | 5 | V | |
Collector Current | IC | 10 | A | |
Collector Current (Pulse) | ICP | 25 | A | |
Collector Dissipation | PC | 2.0 | W | |
Tc=25 | 35 | W | ||
Junction Temperature | Tj | 150 | ||
Storage Temperature | Tstg | --55 to +150 |