2SD2656T106

Transistors Bipolar (BJT) NPN 30V 1A

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SeekIC No. : 00208416 Detail

2SD2656T106: Transistors Bipolar (BJT) NPN 30V 1A

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Part Number:
2SD2656T106
Mfg:
ROHM Semiconductor
Supply Ability:
5000

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Upload time: 2025/2/15

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Product Details

Quick Details

Transistor Polarity : NPN Collector- Emitter Voltage VCEO Max : 30 V
Emitter- Base Voltage VEBO : 6 V Maximum DC Collector Current : 1 A
DC Collector/Base Gain hfe Min : 270 at 100 mA at 2 V Configuration : Single
Maximum Operating Frequency : 400 MHz Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT Package / Case : SC-70
Packaging : Reel    

Description

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Packaging : Reel
Emitter- Base Voltage VEBO : 6 V
Package / Case : SC-70
Maximum DC Collector Current : 1 A
Collector- Emitter Voltage VCEO Max : 30 V
Maximum Operating Frequency : 400 MHz
DC Collector/Base Gain hfe Min : 270 at 100 mA at 2 V


Specifications

  Connection Diagram


Description

The 2SD2656T106 is designed as one kind of general purpose amplification (30V, 1A) device that can be used in low frequency amplifier driver applications. And this device has some points of features: (1)A collector current is large.; (2)Collector saturation voltage is low. VCE(sat) 350mV At IC = 500 mA / IB = 25 mA.

The absolute maximum ratings of the 2SD2656T106 can be summarized as:(1)Collector-base voltage: 30 V;(2)Collector-emitter voltage: 30 V;(3)Emitter-base voltage: 6 V;(4)Collector current: 1.0 A;(5)Power dissipation: 200 mW;(6)Junction temperature: 150 °C;(7)Range of storage temperature: -55 °C tp +150 °C.

The electrical characteristics of 2SD2656T106 can be summarized as:(1)Collector-base breakdown voltage: 30 V;(2)Collector-emitter breakdown voltage: 30 V;(3)Emitter-base breakdown voltage: 6 V;(4)Collector cutoff current: 100 nA;(5)Emitter cutoff current: 100 nA;(6)Collector-emitter saturation voltage: 140 to 350 mV;(7)DC current gain: 270 to 680;(8)Transition frequency: 400 MHz;(9)Corrector output capacitance: 5 pF. If you want to know more information about the 2SD2656T106, please download the datasheet in www.seekic.com or www.chinaicmart.com .




Parameters:

Technical/Catalog Information2SD2656T106
VendorRohm Semiconductor(VA)
CategoryDiscrete Semiconductor Products
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)30V
Current - Collector (Ic) (Max)1A
Power - Max200mW
DC Current Gain (hFE) (Min) @ Ic, Vce270 @ 100mA, 2V
Vce Saturation (Max) @ Ib, Ic350mV @ 25mA, 250mA
Frequency - Transition400MHz
Current - Collector Cutoff (Max)-
Mounting TypeSurface Mount
Package / CaseSC-70-3, SOT-323-3
PackagingDigi-Reel?
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names 2SD2656T106
2SD2656T106
2SD2656T106DKR ND
2SD2656T106DKRND
2SD2656T106DKR



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