Features: High speed.High breakdown voltage(VCBO =1500V).High reliability(Adoption of HVP process).Adoption of MBIT process.Specifications Parameter Symbol Conditions Ratings Unit Collector-base voltage VCBO 1500 V Collector-emitter voltage VCEO 700 V Emitter-base volta...
2SD2650: Features: High speed.High breakdown voltage(VCBO =1500V).High reliability(Adoption of HVP process).Adoption of MBIT process.Specifications Parameter Symbol Conditions Ratings Unit Collec...
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Parameter | Symbol | Conditions | Ratings | Unit |
Collector-base voltage | VCBO | 1500 | V | |
Collector-emitter voltage | VCEO | 700 | V | |
Emitter-base voltage | VEBO | 5 | V | |
Collector current | IC | 8/ | A | |
Collector Current (Pulse) | ICP | 20 | A | |
Collector Dissipation | PC | 3.0 | W | |
Tc=25°C | 65 | W | ||
Junction temperature | Tj | 150 | °C | |
Storage Temperature | Tstg | --55 to +150 | °C |