Features: • High speed.• High breakdown voltage(VCBO=1500V).• High reliability(Adoption of HVP process).• Adoption of MBIT process.PinoutSpecifications Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 1500 V C...
2SD2646: Features: • High speed.• High breakdown voltage(VCBO=1500V).• High reliability(Adoption of HVP process).• Adoption of MBIT process.PinoutSpecifications Parameter Sy...
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Parameter |
Symbol |
Conditions |
Ratings |
Unit |
Collector-to-Base Voltage |
VCBO |
1500 |
V | |
Collector-to-Emitter Voltage |
VCEO |
700 |
V | |
Emitter-to-Base Voltage |
VEBO |
5 |
V | |
Collector Current |
Ic |
10 |
mA | |
Collector Current (pulse) |
Icp |
25 |
mA | |
Collector Dissipation |
Pc |
3.0 |
mW | |
Tc=25°C |
80 |
mW | ||
Junction Temperature |
Tj |
150 |
°C | |
Storage Temperature |
Tstg |
55 to +150 |
°C |
Absolute maximum ratings | |
---|---|
VCBO [V] | 1500 |
VCEO [V] | 700 |
IC [A] | 10 |
PC[W] | 80
Tc=25°C |
Electrical characteristics | |
---|---|
hFE min | 5 |
hFE max | 8 |
VCE [V] | 5 |
IC [A] | 8 |
VCE (sat) max [V] | 3 |
IC [A] | 7.2 |
IB [A] | 1.44 |
tf max [µs] | 0.3 |