Features: • High speed.• High breakdown voltage(VCBO=1500V).• High reliability(Adoption of HVP process).• Adoption of MBIT process.• On-chip damper diode.PinoutSpecifications Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage ...
2SD2634: Features: • High speed.• High breakdown voltage(VCBO=1500V).• High reliability(Adoption of HVP process).• Adoption of MBIT process.• On-chip damper diode.PinoutSpecific...
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Parameter |
Symbol |
Conditions |
Ratings |
Unit |
Collector-to-Base Voltage |
VCBO |
1500 |
V | |
Collector-to-Emitter Voltage |
VCEO(sus) |
800 |
V | |
Emitter-to-Base Voltage |
VEBO |
6 |
V | |
Collector Current |
Ic |
8 |
mA | |
Collector Current (pulse) |
Icp |
20 |
mA | |
Collector Dissipation |
Pc |
3.0 |
mW | |
Tc=25°C |
65 |
mW | ||
Junction Temperature |
Tj |
150 |
°C | |
Storage Temperature |
Tstg |
55 to +150 |
°C |
Absolute maximum ratings | |
---|---|
VCBO [V] | 1500 |
VCEO [V] | 800 |
IC [A] | 8 |
PC[W] | 65
Tc=25°C |
Electrical characteristics | |
---|---|
hFE min | 5 |
hFE max | 8 |
VCE [V] | 5 |
IC [A] | 5 |
VCE (sat) max [V] | 3 |
IC [A] | 4.5 |
IB [A] | 0.9 |
tf max [µs] | 0.3 |