Features: · High speed.· High breakdown voltage (VCBO=1500V).· High reliability (Adoption of HVP process).· Adoption of MBIT process.· On-chip damper diode.Specifications Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 1500 V Collector-to-Emitter Voltage...
2SD2629: Features: · High speed.· High breakdown voltage (VCBO=1500V).· High reliability (Adoption of HVP process).· Adoption of MBIT process.· On-chip damper diode.Specifications Parameter Symbol Con...
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Parameter | Symbol | Conditions | Ratings | Unit |
Collector-to-Base Voltage | VCBO | 1500 | V | |
Collector-to-Emitter Voltage | VCEO | 800 | V | |
Emitter-to-Base Voltage | VEBO | 6 | V | |
Collector Currentv | IC | 6 | A | |
Collector Current (pulse) | ICP | 15 | A | |
Collector Dissipation | PC | 2.0 | W | |
Tc=25 | 35 | W | ||
Junction Temperature | Tj | 150 | ||
Storage Temperature | Tstg | 55 to +150 |