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2SD2624

Features: High speed.High breakdown voltage(VCBO=1500V).High reliability(Adoption of HVP process).Adoption of MBIT process.On-chip damper diode.PinoutSpecifications Parameter Symbol Conditions Ratings Unit Collector-base voltage VCBO 1500 V Collector-emitter voltage VCEO 80...

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2SD2624: Features: High speed.High breakdown voltage(VCBO=1500V).High reliability(Adoption of HVP process).Adoption of MBIT process.On-chip damper diode.PinoutSpecifications Parameter Symbol Condition...

2SD2624 Data Sheet

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Part Number:
2SD2624
Supply Ability:
5000

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Upload time: 2024/5/19

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Product Details

Description



Features:

High speed.
High breakdown voltage(VCBO=1500V).
High reliability(Adoption of HVP process).
Adoption of MBIT process.
On-chip damper diode.




Pinout






Specifications

Parameter Symbol Conditions Ratings Unit
Collector-base voltage VCBO 1500 V
Collector-emitter voltage VCEO 800 V
Emitter-base voltage VEBO 6 V
Collector current IC 6 A
Collector Current (Pulse) ICP 15 A
Collector Dissipation PC 3.0 W
Tc=25°C 60 W
Junction temperature Tj 150 °C
Storage Temperature Tstg --55 to +150 °C


Absolute maximum ratings
VCBO [V] 1500
VCEO [V] 800
IC [A] 6
PC[W] 60
Tc=25°C
Electrical characteristics
hFE min 5
hFE max 8
VCE [V] 5
IC [A] 3.5
VCE (sat) max [V] 3
IC [A] 3.15
IB [A] 0.63
tf max [µs] 0.3





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