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2SD2579

Features: · High speed.· High breakdown voltage (VCBO=1500V).· High reliability (Adoption of HVP process).· Adoption of MBIT process.PinoutSpecifications Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 1500 V Collector-to-Emitter Vo...

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2SD2579: Features: · High speed.· High breakdown voltage (VCBO=1500V).· High reliability (Adoption of HVP process).· Adoption of MBIT process.PinoutSpecifications Parameter Symbol Conditions ...

2SD2579 Data Sheet

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Part Number:
2SD2579
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

· High speed.
· High breakdown voltage (VCBO=1500V).
· High reliability (Adoption of HVP process).
· Adoption of MBIT process.






Pinout








Specifications

Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
VCBO
1500
V
Collector-to-Emitter Voltage
VCEO(sus)
800
V

Emitter-to-Base Voltage

VEBO

6

V

Collector Current
Ic
8
mA
Collector Current (pulse)
Icp

20
mA
Collector Dissipation
Pc
3.0
mW

Tc=25°C

60

mW

Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
55 to +150
°C


Absolute maximum ratings
VCBO [V] 1500
VCEO [V] 800
IC [A] 8
PC[W] 60
Tc=25°C
Electrical characteristics
hFE min 20
hFE max 35
VCE [V] 5
IC [A] 1
VCE (sat) max [V] 5
IC [A] 5
IB [A] 1
tf max [µs] 0.3





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