2SD2571

The 2SD2571 is designed as toshiba transistor silicon NPN triple diffused type for high power switching applications and hammer drive, pulse motor drive applications.

2SD2571 has two features. (1)It has high DC current gain which would be 2000 min at Vce=2V, Ic=1A. (2)Its low saturation voltage would be max 1.5V at Ic=1A. Those are all the main features.

Some absolute maximum ratings of 2SD2571 have been concluded into several points as follow. (1)Its collector to base voltage would be 100+/-10V. (2)Its collector to emitter voltage would be 100+/-10V. (3)Its emitter to base voltage would be 8V. (4)Its collector current would be 2A for DC and would be 3A for pulse. (5)Its base current would be 0.5A. (6)Its collector power dissipation would be 2.0W at Ta=25°C and would be 25W at Tc=25°C. (7)Its junction temperature would be 150°C. (8)Its storage temperature range would be from -55°C to 150°C. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some electrical characteristics of 2SD2571 are concluded as follow. (1)Its collector cutoff current would be max 100uA. (2)Its emitter cutoff current would be min 0.8mA and max 4.0mA. (3)Its collector to emitter breakdown voltage would be min 85V and typ 110V and max 115V. (4)Its DC current gain would be min 2000 and max 15000 with conditions of Vce=2V and Ic=1A and it would be min 1000 with conditions of Vce=2V, Ic=1.5A. (5)Its collector to emitter saturation voltage would be max 1.5V. (6)Its base to emitter saturation voltage would be max 2.0V. (7)Its switching time would be typ 0.45us for turn-on time and would be typ 2.0us for storage time and would be typ 0.4us for fall time. And so on. If you have any question or suggestion or want to know more information please contact us for details. Thank you!