2SD2559

DescriptionThe 2SD2559 is a kind of transistor. It is silicon NPN triple diffused mesa type. It is intended for horizontal deflection output for color TV. There are some features as follows: (1)high voltage: VCBO=1500 V; (2)low saturation voltage: VCE(sat)=5 V (max); (3)built-in damper type; (4)co...

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SeekIC No. : 004224728 Detail

2SD2559: DescriptionThe 2SD2559 is a kind of transistor. It is silicon NPN triple diffused mesa type. It is intended for horizontal deflection output for color TV. There are some features as follows: (1)high...

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Part Number:
2SD2559
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Description



Description

The 2SD2559 is a kind of transistor. It is silicon NPN triple diffused mesa type. It is intended for horizontal deflection output for color TV. There are some features as follows: (1)high voltage: VCBO=1500 V; (2)low saturation voltage: VCE(sat)=5 V (max); (3)built-in damper type; (4)collector metal (Fin) is fully covered with mold resin.

What comes next is the absolute maximum ratings of 2SD2559 (Ta=25): (1)collector-base voltage, VCBO: 1500 V; (2)collector-emitter voltage, VCEO: 600 V; (3)emitter-base voltage, VEBO: 5 V; (4)collector current, IC: 8 A when DC and 16 A when pulse; (5)base current, IB: 4 A; (6)collector power dissipation, PC: 50 W; (7)junction temperature, Tj: 150; (8)storage temperature range, Tstg: -55 to 150.

The following is the electrical characteristics of 2SD2559 (Ta=25): (1)collector cutoff current, ICBO: 1 mA max at VCB=1500 V, IE=0; (2)emitter cutoff current, IEBO: 83 mA min and 250 mA max at VEB=5 V, IC=0; (3)emitter-base breakdown voltage, V(BR)EBO: 5 V min at IE=300 mA, IB=0; (4)DC current gain, hFE: 10 min and 30 max at VCE=5 V, IC=1 A; 5 min and 9 max when VCE=5 V, IC=6 A; (5)collector-emitter saturation voltage, VCE(sat): 5 V max at IC=6 A, IB=1.2 A; (6)base-emitter saturation voltage, VBE(sat): 1.5 V max at IC=6 A, IB=1.2 A; (7)transition frequency, fT: 2 MHz typ at VCE=10 V, IE=0.1 A; (8)collector output capacitance, Cob: 125 pF typ at VCB=10 V, IE=0, f=1 MHz.




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