2SD2536

The 2SD2536 is a kind of transistor. It is silicon NPN epitaxial type. It is intended for micro motor drive, hammer drive applications and switching applications. There are some features as follows: (1)high DC current gain: hFE=2000 (min) (VCE=2 V, IC=1 A); (2)low saturation voltage: VCE(sat)=1.2 V (max) (IC=0.7 A, VBH=4.2 V); (3)zener diode included between collector and base.

What comes next is the absolute maximum ratings of 2SD2536 (Ta=25): (1)collector-base voltage, VCBO: 85 V; (2)collector-emitter voltage, VCEO: 100±15 V; (3)emitter-base voltage, VEBO: 6 V; (4)bias voltage, VB: 20 V; (5)collector current, IC: 2 A; (6)base current, IB: 0.5 A; (7)collector power dissipation, PC: 0.9 W; (8)junction temperature, Tj: 150; (9)storage temperature range, Tstg: -55 to 150.

The following is the electrical characteristics of 2SD2536 (Ta=25): (1)collector cutoff current, ICBO: 10A max at VCB=80 V, IE=0; (2)emitter cutoff current, IEBO: 0.3 mA min and 1.5 mA max at VEB=6 V, IC=0; (3)collector-emitter breakdown voltage, V(BR)CEO: 85 V min, 100 V typ and 115 V max at IC=10 mA, IB=0; (4)DC current gain, hFE: 2000 min at VCE=2 V, IC=1 A; (5)collector-emitter saturation voltage, VCE(sat): 1.2 V max at IC=0.7 A, VBH=4.2 V; 1.5 V max IC=1 A, VBH=4.2 V; (6)base resistance, RB: 2.5 k min, 3.6 k typ and 4.7 k max; (7)collector output capacitance, Cob: 20 pF when VCB=10 V, IE=0, f=1 MHz.