2SD2526

The 2SD2526 is a kind of transistor. It is silicon NPN triple diffused type. It is intended for high power switching applications and hammer drive, pulse motor drive applications. There are some features as follows: (1)high DC current gain: hFE=2000 (min) (VCE=3 V, IC=3 A); (2)low saturation voltage: VCE(sat)=1.5 V (max) (IC=3 A); (3)complementary to 2SB1641.

What comes next is the absolute maximum ratings of 2SD2526 (Ta=25): (1)collector-base voltage, VCBO: 100 V; (2)collector-emitter voltage, VCEO: 100 V; (3)emitter-base voltage, VEBO: 7 V; (4)collector current, IC: 5 A when DC and 8 A when pulse; (5)base current, IB: 0.5 A; (6)collector power dissipation, PC: 1.8 W; (7)junction temperature, Tj: 150; (8)storage temperature range, Tstg: -55 to 150.

The following is the electrical characteristics of 2SD2526 (Ta=25): (1)collector cutoff current, ICBO: 100A max at VCB=100 V, IE=0; (2)emitter cutoff current, IEBO: 2.5 mA max at VEB=6 V, IC=0; (3)collector-emitter breakdown voltage, V(BR)CEO: 100 V min at IC=30 mA, IB=0; (4)DC current gain, hFE: 2000 min and 15000 max at VCE=3 V, IC=3 A; 1000 min when VCE=3 V, IC=5 A; (5)collector-emitter saturation voltage, VCE(sat): 1.1 V typ and 1.5 V max at IC=3 A, IB=6 mA; 1.3 V typ and 2.5 V max at IC=5 A, IB=20 mA; (6)base-emitter saturation voltage, VBE(sat): 1.7 V typ and 2.5 V max at IC=3 A, IB=6 mA.