DescriptionThe 2SD2499 is a kind of transistor. It is silicon NPN triple diffused mesa type. It is intended for horizontal deflection output for color TV. There are some features as follows: (1)high voltage: VCBO=1500 V; (2)low saturation voltage: VCE(sat)=5 V (max); (3)high speed: tf=0.3s (typ); ...
2SD2499: DescriptionThe 2SD2499 is a kind of transistor. It is silicon NPN triple diffused mesa type. It is intended for horizontal deflection output for color TV. There are some features as follows: (1)high...
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The 2SD2499 is a kind of transistor. It is silicon NPN triple diffused mesa type. It is intended for horizontal deflection output for color TV. There are some features as follows: (1)high voltage: VCBO=1500 V; (2)low saturation voltage: VCE(sat)=5 V (max); (3)high speed: tf=0.3s (typ); (4)collector metal (Fin) is fully covered with mold resin; (5)built-in damper type.
What comes next is the absolute maximum ratings of 2SD2499 (Ta=25): (1)collector-base voltage, VCBO: 1500 V; (2)collector-emitter voltage, VCEO: 600 V; (3)emitter-base voltage, VEBO: 5 V; (4)collector current, IC: 6 A when DC and 12 A when pulse; (5)base current, IB: 3 A; (6)collector power dissipation, PC: 50 W; (7)junction temperature, Tj: 150; (8)storage temperature range, Tstg: -55 to 150.
The following is the electrical characteristics of 2SD2499 (Ta=25): (1)collector cutoff current, ICBO: 1 mA max at VCB=1500 V, IE=0; (2)emitter cutoff current, IEBO: 67 mA min and 200 mA max at VEB=5 V, IC=0; (3)emitter-base breakdown voltage, V(BR)EBO: 5 V min at IE=400 mA, IC=0; (4)DC current gain, hFE: 8 min and 25 max at VCE=5 V, IC=1 A; 5 min and 9 max when VCE=5 V, IC=4 A; (5)collector-emitter saturation voltage, VCE(sat): 5 V max at IC=4 A, IB=0.8 A; (6)base-emitter saturation voltage, VBE(sat): 1.05 V typ and 1.3 V max at IC=4 A, IB=0.8 A; (7)transition frequency, fT: 2 MHz typ at VCE=10 V, IE=0.1 A; (8)collector output capacitance, Cob: 95 pF typ at VCB=10 V, IE=0, f=1 MHz.