2SD2498

DescriptionThe 2SD2498 is a kind of transistor. It is silicon NPN triple diffused mesa type. It is intended for horizontal deflection output for high resolution display, color TV and high speed switching applications. There are some features as follows: (1)high voltage: VCBO=1500 V; (2)low saturat...

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SeekIC No. : 004224710 Detail

2SD2498: DescriptionThe 2SD2498 is a kind of transistor. It is silicon NPN triple diffused mesa type. It is intended for horizontal deflection output for high resolution display, color TV and high speed swit...

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Part Number:
2SD2498
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Description

The 2SD2498 is a kind of transistor. It is silicon NPN triple diffused mesa type. It is intended for horizontal deflection output for high resolution display, color TV and high speed switching applications. There are some features as follows: (1)high voltage: VCBO=1500 V; (2)low saturation voltage: VCE(sat)=5 V (max); (3)high speed: tf=0.4s (typ); (4)collector metal (Fin) is fully covered with mold resin.

What comes next is the absolute maximum ratings of 2SD2498 (Ta=25): (1)collector-base voltage, VCBO: 1500 V; (2)collector-emitter voltage, VCEO: 600 V; (3)emitter-base voltage, VEBO: 5 V; (4)collector current, IC: 6 A when DC and 12 A when pulse; (5)base current, IB: 3 A; (6)collector power dissipation, PC: 50 W; (7)junction temperature, Tj: 150; (8)storage temperature range, Tstg: -55 to 150.

The following is the electrical characteristics of 2SD2498 (Ta=25): (1)collector cutoff current, ICBO: 1 mA max at VCB=1500 V, IE=0; (2)emitter cutoff current, IEBO: 10A max at VEB=5 V, IC=0; (3)collector-emitter breakdown voltage, V(BR)CEO: 600 V min at IC=10 mA, IB=0; (4)DC current gain, hFE: 10 min and 30 max at VCE=5 V, IC=1 A; 5 min and 9 max when VCE=5 V, IC=4 A; (5)collector-emitter saturation voltage, VCE(sat): 5 V max at IC=4 A, IB=0.8 A; (6)base-emitter saturation voltage, VBE(sat): 0.9 V typ and 1.2 V max at IC=4 A, IB=0.8 A; (7)transition frequency, fT: 2 MHz typ at VCE=10 V, IE=0.1 A; (8)collector output capacitance, Cob: 95 pF typ at VCB=10 V, IE=0, f=1 MHz.






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