2SD2480

The 2SD2480 is a kind of transistor. It is silicon NPN triple diffused type (darlington). It is intended for micro motor drive, hammer drive applications, switching applications and power amplifier applications. It has some features: (1)low saturation voltage: VCE(sat)=1.5 V (max); (2)high DC current gain: hFE=2000 (min).

What comes next is the absolute maximum ratings of 2SD2480 (Ta=25): (1)collector-base voltage, VCBO: 100 V; (2)collector-emitter voltage, VCEO: 100 V; (3)emitter-base voltage, VEBO: 8 V; (4)collector current, IC: 2 A when DC and 3 A when pulse; (5)base current, IB: 0.5 A; (6)collector power dissipation, PC: 1.3 W; (7)junction temperature, Tj: 150; (8)storage temperature range, Tstg: -55 to 150.

The following is the electrical characteristics of 2SD2480 (Ta=25): (1)collector cutoff current, ICBO: 10A max at VCB=80 V, IE=0; (2)emitter cutoff current, IEBO: 4 mA max at VEB=8 V, IC=0; (3)collector-emitter breakdown voltage, V(BR)CEO: 100 V min at IC=10 mA, IB=0; (4)DC current gain, hFE: 2000 min at VCE=2 V, IC=1 A; (5)collector-emitter saturation voltage, VCE(sat): 1.5 V max at IC=1 A, IB=1 mA; (6)base-emitter saturation voltage, VBE(sat): 2.0 V max at IC=1 A, IB=1 mA; (7)collector output capacitance, Cob: 20 pF typ at VCB=10 V, IE=0, f=1 MHz; (8)transition frequency, fT: 100 MHz typ at VCE=2 V, IC=0.5 A.