2SD2462

The 2SD2462 is a kind of transistor. It is silicon NPN triple diffused type. It is intended for power amplifier applications. It has some features: (1)low collector saturation voltage: VCE(sat)=0.4 V (typ); (2)high DC current gain: hFE=800 to 3200; (3)complementary to 2SB1602.

What comes next is the absolute maximum ratings of 2SD2462 (Ta=25): (1)collector-base voltage, VCBO: 60 V; (2)collector-emitter voltage, VCEO: 60 V; (3)emitter-base voltage, VEBO: 7 V; (4)collector current, IC: 3 A when DC and 6 A when pulse; (5)base current, IB: 0.6 A; (6)collector power dissipation, PC: 1.3 W; (7)junction temperature, Tj: 150; (8)storage temperature range, Tstg: -55 to 150.

The following is the electrical characteristics of 2SD2462 (Ta=25): (1)collector cutoff current, ICBO: 100A max at VCB=60 V, IE=0; (2)emitter cutoff current, IEBO: 100A max at VEB=7 V, IC=0; (3)collector-emitter breakdown voltage, V(BR)CEO: 60 V min at IC=50 mA, IB=0; (4)DC current gain, hFE: 800 min and 3200 max at VCE=5 V, IC=0.2 A; 350 min at VCE=5 V, IC=1.5 A; (5)collector-emitter saturation voltage, VCE(sat): 0.4 V typ and 1.0 V max at IC=1 A, IB=10 mA; (6)base-emitter voltage, VBE: 0.7 V typ and 1.0 V max at VCE=5 V, IC=0.5 A; (7)collector output capacitance, Cob: 42 pF typ at VCB=10 V, IE=0, f=1 MHz; (8)transition frequency, fT: 18 MHz typ at VCE=5 V, IC=0.5 A.