2SD2440

The 2SD2440 is a kind of transistor. It is silicon NPN triple diffused type. It is intended for switching application. It has some features: (1)high breakdown voltage: VCBO=100 V (min), VEBO=18 V (min); (2)low saturation voltage: VCE(sat)=1.2 V (max) (IC=5 A, IB=1 A); (3)high speed: tf=1s (typ) (IC=5 A, IB=±0.5 A); (4)high DC current gain: hFE=200 (min) (VCE=5 V, IC=0.5 A).

What comes next is the absolute maximum ratings of 2SD2440 (Ta=25): (1)collector-base voltage, VCBO: 100 V; (2)collector-emitter voltage, VCEO: 60 V; (3)emitter-base voltage, VEBO: 18 V; (4)collector current, IC: 6 A; (5)base current, IB: 0.4 A; (6)collector power dissipation, PC: 25 W at Tc=25; (7)junction temperature, Tj: 150; (8)storage temperature range, Tstg: -55 to 150.

The following is the electrical characteristics of 2SD2440 (Ta=25): (1)collector cutoff current, ICBO: 10A max at VCB=100 V, IE=0; (2)collector cutoff current, ICER: 15 mA max at VCE=80 V, RBE=50;(3)emitter cutoff current, IEBO: 2A max at VEB=15 V, IC=0; (4)collector-emitter breakdown voltage, V(BR)CEO: 60 V min at IC=50 mA, IB=0; (5)emitter-base breakdown voltage, V(BR)EBO: 5 V min at IE=10 mA, IC=0; (6)DC current gain, hFE: 200 min and 900 max at VCE=5 V, IC=0.5 A; 20 min and 100 max at VCE=5 V, IC=5 A; (7)collector-emitter saturation voltage, VCE(sat): 1.2 V max at IC=5 A, IB=1 A; (8)base-emitter saturation voltage, VBE(sat): 2.5 V max at IC=5 A, IB=1 A; (9)collector output capacitance, Cob: 71 pF typ at VCB=10 V, IE=0, f=1 MHz; (10)transition frequency, fT: 5 MHz typ at VCE=10 V, IC=0.5 A.