2SD2406

The 2SD2406 is a kind of transistor. It is silicon NPN triple diffused type. It is intended for power amplifier applications. It has some features: (1)high power dissipation: PC=25 W (Tc=25); (2)good linearity of hFE.

What comes next is the absolute maximum ratings of 2SD2406 (Ta=25): (1)collector-base voltage, VCBO: 80 V; (2)collector-emitter voltage, VCEO: 80 V; (3)emitter-base voltage, VEBO: 5 V; (4)collector current, IC: 4 A; (5)base current, IB: 0.4 A; (6)collector power dissipation, PC: 25 W at Tc=25; (7)junction temperature, Tj: 150; (8)storage temperature range, Tstg: -55 to 150.

The following is the electrical characteristics of 2SD2406 (Ta=25): (1)collector cutoff current, ICBO: 30A max at VCB=80 V, IE=0; (2)emitter cutoff current, IEBO: 100A max at VEB=5 V, IC=0; (3)collector-emitter breakdown voltage, V(BR)CEO: 80 V min at IC=50 mA, IB=0; (4)emitter-base breakdown voltage, V(BR)EBO: 5 V min at IE=10 mA, IC=0; (5)DC current gain, hFE: 70 min and 240 max at VCE=5 V, IC=0.5 A; 15 min and 50 typ at VCE=5 V, IC=3 A; (6)collector-emitter saturation voltage, VCE(sat): 0.45 V typ and 1.5 V max at IC=3 A, IB=0.3 A; (7)base-emitter voltage, VBE: 1.0 V typ and 1.5 V max at IC=3 A, VCE=5 V; (8)collector output capacitance, Cob: 90 pF typ at VCB=10 V, IE=0, f=1 MHz; (9)transition frequency, fT: 8.0 MHz typ at VCE=5 V, IC=0.5 A.