DescriptionThe 2SD2396 is designed as one kind of low frequency transistor (60V, 3A) that has four points of features:(1)low saturation voltage, typical VCE(sat)=0.3 V at Ic/IB=2A/50 mA;(2)high DC current gain (typically, DC current gain=1000 at Vce=4 V, Ic=0.5A);(3)Pc=30 W. (Tc=25);(4)wide SOA (s...
2SD2396: DescriptionThe 2SD2396 is designed as one kind of low frequency transistor (60V, 3A) that has four points of features:(1)low saturation voltage, typical VCE(sat)=0.3 V at Ic/IB=2A/50 mA;(2)high DC c...
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The 2SD2396 is designed as one kind of low frequency transistor (60V, 3A) that has four points of features:(1)low saturation voltage, typical VCE(sat)=0.3 V at Ic/IB=2A/50 mA;(2)high DC current gain (typically, DC current gain=1000 at Vce=4 V, Ic=0.5A);(3)Pc=30 W. (Tc=25);(4)wide SOA (safe operating area).
The absolute maximum ratings of the 2SD2396 can be summarized as:(1)collector-base voltage: 80 V;(2)collector-emitter voltage: 60 V;(3)emitter-base voltage: 6 V;(4)collector current: 3 A(4)junction temperature:150;(5)storage temperature:-55 to +150.
And the electrical characteristics of the 2SD2396 can be summarized as:(1)collector-base breakdown voltage: 80 V;(2)collector-emitter breakdown voltage: 60 V(3)emitter cutoff current: 100 uA;(4)collector-emitter saturation voltage: 0.3 V;(5)DC current transfer ratio: 400 to 2000;(6)transition frequency: 40 MHz;(7)output capacitance: 55 pF. If you want to know more information such as the electrical characteristics about the 2SD2396, please download the datasheet in www.seekic.com or www.chinaicmart.com.