2SD2389

The 2SD2389 is a silicon NPN triple diffused plannar transistor(complement to type 2SB1559),and it can be applied to audio,series regulator and general purpose.
The absolute maximun ratings of the 2SD2389 at Ta=25°C unless otherwise noted having Collector to base Voltage VCBO is 160V;Collector to emitter Voltage VCEO is 150 V;Emitter to base Voltage VEBO is 5 V;Collector Current IC is 8A;Junction temperature is +150°C ;Storage temperature is -55 to +150°C ;collector Dissipation Pc(Tc=25°C) is 80 W etc.
The 2SD2389 is used in multi-mode active termination applications, where single ended (SE) and low voltage differential (LVD) SCSI devices might coexist. The 2SD2389 has both SE and LVD SCSI termination net- works integrated into a single monolithic component. The correct termination network is automatically determined by the SCSI bus "DIFSENS" signal. Low profile (4.5mm max. height) SMD type. Unshielded. Self-leads, suitable for high density mounting. High energy storage and low DCR. Provided with embossed carrier tape packing. Ideal for power source circuits, DC-DC converter, DC-AC inverters inductor application. In addition to the standard versions shown here, custom inductors are available to meet your exact requirements.
The 2SD2389 is an all N-Channel three phase power MOSFET Bridge Circuit. Packaged in a space efficient isolated ceramic tab power SIP that allows for direct heat sinking, the 2SD2389can be interfaced with a wide array of brushless motor drive IC's. The 2SD2389uses M.S Kennedy's proven power hybrid technology to produce a cost effective high performance circuit for use in today's sophisticated servo motor and disk drive systems.
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