2SD2387

The 2SD2387 is a kind of transistor. It is silicon NPN triple diffused type (darlington power transistor). 2SD2387 is intended for power amplifier applications. It has some features: (1)high breakdown voltage: VCEO=140 V (min); (2)complementary to 2SB1558.

What comes next is the absolute maximum ratings of 2SD2387 (Ta=25): (1)collector-base voltage, VCBO: 140 V; (2)collector-emitter voltage, VCEO: 140 V; (3)emitter-base voltage, VEBO: 5 V; (4)collector current, IC: 8 A; (5)base current, IB: 0.1 A; (6)collector power dissipation, PC: 80 W at Tc=25; (7)junction temperature, Tj: 150; (8)storage temperature range, Tstg: -55 to 150.

The following is the electrical characteristics of 2SD2387 (Ta=25): (1)collector cutoff current, ICBO: 5.0A max at VCB=140 V, IE=0; (2)emitter cutoff current, IEBO: 5.0A max at VEB=5 V, IC=0; (3)collector-base breakdown voltage, V(BR)CEO: 140 V min at IC=50 mA, IB=0; (4)DC current gain, hFE: 5000 min and 30000 max at VCE=5 V, IC=7 A; 2000 min at VCE=5 V, IC=12 A; (5)collector-emitter saturation voltage, VCE(sat): 2.5 V max at IC=7 A, IB=7 mA; (6)base-emitter voltage, VBE: 3.0 V max at IC=7 A, VCE=5 V; (7)collector output capacitance, Cob: 110 pF typ at VCB=10 V, IE=0, f=1 MHz; (8)transition frequency, fT: 30 MHz typ at VCE=5 V, IC=1 A.