Features: • High voltage• Small dimensionSpecifications PARAMETER SYMBOL RATING UNIT Collector to Base Voltage VCBO 400 V Collector to Emitter Voltage VCEO 300 V Emitter to Base Voltage VEBO 5.0 V Collector Current(DC) IC(DC) ...
2SD2383: Features: • High voltage• Small dimensionSpecifications PARAMETER SYMBOL RATING UNIT Collector to Base Voltage VCBO 400 V Collector to Emitter Voltage V...
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PARAMETER |
SYMBOL |
RATING |
UNIT |
Collector to Base Voltage |
VCBO |
400 |
V |
Collector to Emitter Voltage |
VCEO |
300 |
V |
Emitter to Base Voltage |
VEBO |
5.0 |
V |
Collector Current(DC) |
IC(DC) |
20 |
mA |
Total Power Dissipation |
PT |
200
|
mW |
Junction Temperature |
Tj |
150 |
|
Storage Temperature |
Tstg |
-55to+150 |
The 2SD2383 is an element realizing high voltage in small dimension. This transistor is ideal for downsizing sets requiring high voltage