2SD2271

The 2SD2271 is a kind of transistor. It is silicon NPN triple diffused type (darlington power transistor). It is intended for motor drive applications and high current switching applications. It has some features: (1)high DC current gain: hFE=500 (min) (VCE=2 V, IC=5 A); (2)high breakdown voltage: VCEO(SUS)=200 V (min).

What comes next is the absolute maximum ratings of 2SD2271 (Ta=25): (1)collector-base voltage, VCBO: 300 V; (2)collector-emitter voltage, VCEO: 200 V; (3)emitter-base voltage, VEBO: 6 V; (4)collector current, DC, IC: ±12 A; (5)collector current, pulse, ICP: ±18 A; (6)base current, IB: 1 A ; (7)collector power dissipation, PC: 2.0 W at Ta=25 and 30 W at Tc=25; (8)junction temperature, Tj: 150; (9)storage temperature range, Tstg: -55 to 150.

The following is the electrical characteristics of 2SD2271 (Ta=25): (1)collector cutoff current, ICBO: 100A max at VCB=300 V, IE=0; (2)emitter cutoff current, IEBO: 50 mA min and 150 mA max at VEB=6 V, IC=0; (3)collector-base breakdown voltage, V(BR)CBO: 300 V min at IC=1 mA, IE=0; (4)collector-emitter sustaining voltage, VCEO(SUS): 200 V min at IC=0.25 A, L=40 mH; (5)DC current gain, hFE: 500 min and 5000 max at VCE=2 V, IC=5 A; 100 min at VCE=2 V, IC=10 A; (6)collector-emitter saturation voltage, VCE(sat): 2.0 V max at IC=10 A, IB=0.1 A; (7)base-emitter saturation voltage, VBE(sat): 2.3 V max at IC=10 A, IB=0.1 A; (8)transition frequency, fT: 40 MHz typ at VCE=2 V, IC=1 A; (9)collector output capacitance, Cob: 200 pF typ at VCB=10 V, IE=0, f=1 MHz.