2SD2248

The 2SD2248 is a kind of transistor. It is silicon NPN epitaxial type. It is intended for hammer drive, pulse motor drive applications and for inductive load drive. It has some features: (1)high DC current gain: hFE=2000 (min) (VCE=2 V, IC=1 A); (2)low saturation voltage: VCE(sat)=1.5 V (max) (IC=1 A, IB=1 mA); (3)built-in zener diode between collector and base.

What comes next is the absolute maximum ratings of 2SD2248 (Ta=25): (1)collector-base voltage, VCBO: 80±10 V; (2)collector-emitter voltage, VCEO: 80±10 V; (3)emitter-base voltage, VEBO: 8 V; (4)collector current, DC, IC: ±2 A; (5)collector current, pulse, ICP: ±3 A ; (6)base current, IB: 0.5 A ; (7)collector power dissipation, PC: 0.9 W at Ta=25; (8)junction temperature, Tj: 150; (9)storage temperature range, Tstg: -55 to 150.

The following is the electrical characteristics of 2SD2248(Ta=25): (1)collector cutoff current, ICBO: 10A max at VCB=60 V, IE=0; (2)emitter cutoff current, IEBO: 0.8 mA min and 4.0 mA max at VEB=8 V, IC=0; (3)collector-base breakdown voltage, V(BR)CBO: 70 V min, 80 V typ and 90 V max at IC=100A, IE=0; (4)collector-emitter breakdown voltage, V(BR)CEO: 70 V min, 80 V typ and 90 V max at IC=10 mA, IB=0; (5)DC current gain, hFE: 2000 min at VCE=2 V, IC=1 A; (6)collector-emitter saturation voltage, VCE(sat): 1.5 V max at IC=1 A, IB=1 mA; (7)base-emitter saturation voltage, VBE(sat): 2.0 V max at IC=1 A, IB=1 mA; (8)transition frequency, fT: 100 MHz typ at VCE=2 V, IC=0.5 A; (9)collector output capacitance, Cob: 20 pF typ at VCB=10 V, IE=0, f=1 MHz.