Specifications Parameter Symbol Ratings Unit Collector to base voltage VCBO 300 V Collector to emitter voltage VCEO 300 V Emitter to base voltage VEBO 7 V Collector current IC(DC) 300 mA Collector current IC(pulse)* ...
2SD2217: Specifications Parameter Symbol Ratings Unit Collector to base voltage VCBO 300 V Collector to emitter voltage VCEO 300 V Emitter to base voltage ...
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Parameter |
Symbol |
Ratings |
Unit |
Collector to base voltage |
VCBO |
300 |
V |
Collector to emitter voltage |
VCEO |
300 |
V |
Emitter to base voltage |
VEBO |
7 |
V |
Collector current |
IC(DC) |
300 |
mA |
Collector current |
IC(pulse)* |
600 |
mA |
Base current |
IB(DC) |
30 |
mA |
Total power dissipation |
PT (Tc = 25) |
25 |
W |
Total power dissipation |
PT (Ta = 25) |
2.0 |
W |
Junction temperature |
Tj |
150 |
|
Storage temperature |
Tstg |
−55 to +150 |
The 2SD2217 is a mold power transistor developed for lowfrequency power amplifiers and low-speed switching. 2SD2217 is ideal for direct driving from the IC out to drivers such as pulse motor drivers and relay drivers in OA and FA equipment.