2SD2206

Specifications Parameter Symbol Rating Unit Collector-base Voltage VCBO 100 V Collector-emitter Voltage VCEO 100 V Emitter-base Voltage VEBO 8 V Collector Current DC IC 2 A Pulse ICP 3 Base current IB 0.5 A Collector power dissipation PC 900 mW ...

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2SD2206: Specifications Parameter Symbol Rating Unit Collector-base Voltage VCBO 100 V Collector-emitter Voltage VCEO 100 V Emitter-base Voltage VEBO 8 V Collector Current DC I...

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Part Number:
2SD2206
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Specifications

Parameter Symbol Rating Unit
Collector-base Voltage VCBO 100 V
Collector-emitter Voltage VCEO 100 V
Emitter-base Voltage VEBO 8 V
Collector Current DC IC 2 A
Pulse ICP 3
Base current IB 0.5 A
Collector power dissipation PC 900 mW
Junction temperature Tj 150
Storage temperature range Tstg -55 to +150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).




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