Specifications Parameter Symbol Rating Unit Collector-base Voltage VCBO 100 V Collector-emitter Voltage VCEO 100 V Emitter-base Voltage VEBO 8 V Collector Current DC IC 2 A Pulse ICP 3 Base current IB 0.5 A Collector power dissipation PC 900 mW ...
2SD2206: Specifications Parameter Symbol Rating Unit Collector-base Voltage VCBO 100 V Collector-emitter Voltage VCEO 100 V Emitter-base Voltage VEBO 8 V Collector Current DC I...
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Parameter | Symbol | Rating | Unit | |
Collector-base Voltage | VCBO | 100 | V | |
Collector-emitter Voltage | VCEO | 100 | V | |
Emitter-base Voltage | VEBO | 8 | V | |
Collector Current | DC | IC | 2 | A |
Pulse | ICP | 3 | ||
Base current | IB | 0.5 | A | |
Collector power dissipation | PC | 900 | mW | |
Junction temperature | Tj | 150 | ||
Storage temperature range | Tstg | -55 to +150 |
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).