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2SD2204

Features: • High DC current gain: hFE = 2000 (min) (VCE = 3 V, IC = 1.5 A)• Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 1.5 A)Specifications Characteristics Symbol Rating Unit Collector-base voltage VCBO 65 ± 10 V Collector-emitter voltage VCEO 65 ± 10 V ...

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2SD2204: Features: • High DC current gain: hFE = 2000 (min) (VCE = 3 V, IC = 1.5 A)• Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 1.5 A)Specifications Characteristics Symbol Ratin...

2SD2204 Data Sheet

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Part Number:
2SD2204
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5000

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Product Details

Description



Features:

• High DC current gain: hFE = 2000 (min) (VCE = 3 V, IC = 1.5 A)
• Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 1.5 A)




Specifications

Characteristics Symbol Rating Unit
Collector-base voltage VCBO 65 ± 10 V
Collector-emitter voltage VCEO 65 ± 10 V
Emitter-base voltage VEBO 7 V
Collector current DC IC 4 A
Pulse  ICP 6
Base current IB 0.5 A
Collector power dissipation Ta = 25 PC 2.0 W
Tc = 25 25
Junction temperature Tj 150
Storage temperature range Tstg −55 to 150


Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (''Handling Precautions''/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).




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