Features: • High DC current gain: hFE = 2000 (min) (VCE = 3 V, IC = 1.5 A)• Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 1.5 A)Specifications Characteristics Symbol Rating Unit Collector-base voltage VCBO 65 ± 10 V Collector-emitter voltage VCEO 65 ± 10 V ...
2SD2204: Features: • High DC current gain: hFE = 2000 (min) (VCE = 3 V, IC = 1.5 A)• Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 1.5 A)Specifications Characteristics Symbol Ratin...
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• High DC current gain: hFE = 2000 (min) (VCE = 3 V, IC = 1.5 A)
• Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 1.5 A)
Characteristics | Symbol | Rating | Unit | |
Collector-base voltage | VCBO | 65 ± 10 | V | |
Collector-emitter voltage | VCEO | 65 ± 10 | V | |
Emitter-base voltage | VEBO | 7 | V | |
Collector current | DC | IC | 4 | A |
Pulse | ICP | 6 | ||
Base current | IB | 0.5 | A | |
Collector power dissipation | Ta = 25 | PC | 2.0 | W |
Tc = 25 | 25 | |||
Junction temperature | Tj | 150 | ||
Storage temperature range | Tstg | −55 to 150 |
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (''Handling Precautions''/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).