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2SD2165

Features: • High hFE and low VCE(sat): hFE 1,300 TYP. (VCE = 5.0 V, IC = 1.0 A) VCE(SAT) 0.3 V TYP. (IC = 3.0 A, IB = 30 mA)• Mold package that does not require an insulating board or insulation bushing .Specifications Parameter Symbol Ratings Unit Collector to base voltage...

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SeekIC No. : 004224550 Detail

2SD2165: Features: • High hFE and low VCE(sat): hFE 1,300 TYP. (VCE = 5.0 V, IC = 1.0 A) VCE(SAT) 0.3 V TYP. (IC = 3.0 A, IB = 30 mA)• Mold package that does not require an insulating board or i...

2SD2165 Data Sheet

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Part Number:
2SD2165
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/5/16

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Product Details

Description



Features:

• High hFE and low VCE(sat):
   hFE 1,300 TYP. (VCE = 5.0 V, IC = 1.0 A)
   VCE(SAT) 0.3 V TYP. (IC = 3.0 A, IB = 30 mA)
• Mold package that does not require an insulating board or insulation bushing .


Specifications

Parameter Symbol Ratings Unit
Collector to base voltage VCBO 100 V
Collector to emitter voltage VCEO 100 V
Emitter to base voltage VEBO 7.0 V
Collector current (DC) IC(DC) 6.0 A
Collector current (pulse) IC(pulse) 10Note A
Base current (DC) IB(DC) 1.0 A
Total power dissipation (TC = 25) PT 30 W
Total power dissipation (TA = 25) PT 2.0 W
Junction temperature Tj 150
Storage temperature Tstg −55 to +150
Note PW 300 s, duty cycle 10%



Description

The 2SD2165 is a single power transistor developed especially for high hFE. 2SD2165 is ideal for simplifying drive circuits and reducing power dissipation because its hFE is as high as that of Darlington transistors, but it is a single transistor.

In addition, this transistor features a small resin-molded insulation package, thus contributing to high-density mounting and mounting cost reduction.




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