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2SD2164

Features: • High hFE and low VCE(sat): hFE ≅ 1,300 TYP. (VCE = 5.0 V, IC = 0.5 A) VCE(SAT) ≅ 0.3 V TYP. (IC = 2.0 A, IB = 20 mA)• Full mold package that does not require an insulating board or insulation bushingSpecifications Parameter Symbol Ratings Unit...

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SeekIC No. : 004224549 Detail

2SD2164: Features: • High hFE and low VCE(sat): hFE ≅ 1,300 TYP. (VCE = 5.0 V, IC = 0.5 A) VCE(SAT) ≅ 0.3 V TYP. (IC = 2.0 A, IB = 20 mA)• Full mold package that does not require an i...

2SD2164 Data Sheet

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Part Number:
2SD2164
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• High hFE and low VCE(sat):
   hFE ≅ 1,300 TYP. (VCE = 5.0 V, IC = 0.5 A)
   VCE(SAT) ≅ 0.3 V TYP. (IC = 2.0 A, IB = 20 mA)
• Full mold package that does not require an insulating board or insulation bushing


Specifications

Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
60
V
Collector to emitter voltage
VCEO
60
V
Emitter to base voltage
VEBO
7.0
V
Collector current (DC)
IC(DC)
3.0
A
Collector current (pulse)
IC(pulse)
5.0Note
A
Base current (DC)
IB(DC)
0.5
A
Total power dissipation
PT (TC = 25°C)
20
W
Total power dissipation
PT (TA = 25°C)
2.0
W
Junction temperature
Tj
150
Storage temperature
Tstg
−55 to +150

Note PW 300 s, duty cycle 10%


Description

The 2SD2164 is a single power transistor developed especially for high hFE. 2SD2164 is ideal for simplifying drive circuits and reducing power dissipation because its hFE is as high as that of Darlington transistors, but it is a single transistor.
In addition, this transistor features a small resin insulated package, thus contributing to high-density mounting and mounting cost reduction.




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