2SD2155

The 2SD2155 is a kind of transistor. It is silicon NPN triple diffused type. It is intended for power amplifier applications. It has some features: (1)complementary to 2SB1429; (2)recommended for 100 W high fidelity audio frequency amplifier output stage.

What comes next is the absolute maximum ratings of 2SD2155 (Ta=25): (1)collector-base voltage, VCBO: 180 V; (2)collector-emitter voltage, VCEO: 180 V; (3)emitter-base voltage, VEBO: 5 V; (4)collector current, IC: 15 A; (5)base current, IB: 1.5 A ; (6)collector power dissipation, PC: 150 W at Tc=25; (7)junction temperature, Tj: 150; (8)storage temperature range, Tstg: -55 to 150.

The following is the electrical characteristics of 2SD2155 (Ta=25): (1)collector cutoff current, ICBO: 5.0A max at VCB=180 V, IE=0; (2)emitter cutoff current, IEBO: 5.0A max at VEB=5 V, IC=0; (3)collector-emitter breakdown voltage, V(BR)CEO: 180 V min at IC=50 mA, IB=0; (4)DC current gain, hFE: 55 min and 160 max at VCE=5 V, IC=1 A; 30 min at VCE=5 V, IC=6 A; (5)collector-emitter saturation voltage, VCE(sat): 2.0 V max at IC=8 A, IB=0.8 A; (6)base-emitter voltage, VBE: 1.5 V max at IC=6 A, VCE=5 V; (7)transition frequency, fT: 10 MHz typ at VCE=5 V, IC=1 A; (8)collector output capacitance, Cob: 160 pF typ at VCB=10 V, IE=0, f=1 MHz.