2SD2150T100R

Transistors Bipolar (BJT) NPN 20V 3A

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SeekIC No. : 00206570 Detail

2SD2150T100R: Transistors Bipolar (BJT) NPN 20V 3A

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US $ .1~.31 / Piece | Get Latest Price
Part Number:
2SD2150T100R
Mfg:
ROHM Semiconductor
Supply Ability:
5000

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Upload time: 2024/5/16

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Product Details

Quick Details

Transistor Polarity : NPN Collector- Emitter Voltage VCEO Max : 20 V
Emitter- Base Voltage VEBO : 6 V Maximum DC Collector Current : 3 A
DC Collector/Base Gain hfe Min : 120 Configuration : Single Dual Collector
Maximum Operating Frequency : 290 MHz Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT Package / Case : SC-62
Packaging : Reel    

Description

Transistor Polarity : NPN
Collector- Emitter Voltage VCEO Max : 20 V
Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Packaging : Reel
Emitter- Base Voltage VEBO : 6 V
Maximum DC Collector Current : 3 A
DC Collector/Base Gain hfe Min : 120
Configuration : Single Dual Collector
Package / Case : SC-62
Maximum Operating Frequency : 290 MHz


Specifications

  Connection Diagram


Description

The 2SD2150T100R is one member of the 2SD2150 family which is designed as the low frequency transistor (20V, 3A) device that has three points of features:(1)Low VCE(sat) VCE(sat) = 0.2V(Typ.)(IC / IB = 2A / 0.1A); (2)Excellent current gain characteristics; (3)Complements the 2SB1424. And the structure of this device is Epitaxial planar type NPN silicon transistor.

The absolute maximum ratings of the 2SD2150T100R can be summarized as:(1)Collector-base voltage: 40 V;(2)Collector-emitter voltage: 20 V;(3)Emitter-base voltage: 6 V;(4)Collector current: 3 or 5 A;(5)Collector power dissipation: 0.5 W or 2 W;(6)Junction temperature: 150 °C;(7)Storage temperature: -55 °C to +150 °C.

The electrical characteristics of 2SD2150T100R can be summarized as:(1)Collector-base breakdown voltage: 40 V;(2)Collector-emitter breakdown voltage: 20 V;(3)Emitter-base breakdown voltage: 6 V;(4)Collector cutoff current: 0.1 uA;(5)Emitter cutoff current: 0.1 uA;(6)Collector-emitter saturation voltage: 0.2 to 0.5 V;(7)DC current transfer ratio: 120 to 560;(8)Transition frequency: 290 MHz;(9)Output capacitance: 25 pF. If you want to know more information about the 2SD2150T100R, please download the datasheet in www.seekic.com or www.chinaicmart.com .




Parameters:

Technical/Catalog Information2SD2150T100R
VendorRohm Semiconductor(VA)
CategoryDiscrete Semiconductor Products
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)20V
Current - Collector (Ic) (Max)3A
Power - Max500mW
DC Current Gain (hFE) (Min) @ Ic, Vce180 @ 100mA, 2V
Vce Saturation (Max) @ Ib, Ic500mV @ 100mA, 2A
Frequency - Transition290MHz
Current - Collector Cutoff (Max)-
Mounting TypeSurface Mount
Package / CaseSC-62, SOT-89, MPT3 (3 leads + Tab)
PackagingDigi-Reel?
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names 2SD2150T100R
2SD2150T100R
2SD2150T100RDKR ND
2SD2150T100RDKRND
2SD2150T100RDKR



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