2SD2150

The 2SD2150 is designed as the low frequency transistor (20V, 3A) device that has three points of features:(1)Low VCE(sat) VCE(sat) = 0.2V(Typ.)(IC / IB = 2A / 0.1A); (2)Excellent current gain characteristics; (3)Complements the 2SB1424. And the structure of this device is Epitaxial planar type NPN silicon transistor.

The absolute maximum ratings of the 2SD2150 can be summarized as:(1)Collector-base voltage: 40 V;(2)Collector-emitter voltage: 20 V;(3)Emitter-base voltage: 6 V;(4)Collector current: 3 or 5 A;(5)Collector power dissipation: 0.5 W or 2 W;(6)Junction temperature: 150 °C;(7)Storage temperature: -55 °C to +150 °C.

The electrical characteristics of 2SD2150 can be summarized as:(1)Collector-base breakdown voltage: 40 V;(2)Collector-emitter breakdown voltage: 20 V;(3)Emitter-base breakdown voltage: 6 V;(4)Collector cutoff current: 0.1 uA;(5)Emitter cutoff current: 0.1 uA;(6)Collector-emitter saturation voltage: 0.2 to 0.5 V;(7)DC current transfer ratio: 120 to 560;(8)Transition frequency: 290 MHz;(9)Output capacitance: 25 pF. If you want to know more information about the 2SD2150, please download the datasheet in www.seekic.com or www.chinaicmart.com .