2SD2142KT146

Transistors Darlington DARL NPN 30V .3A

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SeekIC No. : 00217029 Detail

2SD2142KT146: Transistors Darlington DARL NPN 30V .3A

floor Price/Ceiling Price

US $ .1~.28 / Piece | Get Latest Price
Part Number:
2SD2142KT146
Mfg:
ROHM Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~500
  • Unit Price
  • $.28
  • $.22
  • $.16
  • $.1
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Quick Details

Configuration : Single Transistor Polarity : NPN
Collector- Emitter Voltage VCEO Max : 30 V Emitter- Base Voltage VEBO : 10 V
Collector- Base Voltage VCBO : 30 V Maximum DC Collector Current : 0.3 A
Maximum Collector Cut-off Current : 0.1 uA Power Dissipation : 0.2 W
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SC-59 Packaging : Reel    

Description

Transistor Polarity : NPN
Mounting Style : SMD/SMT
Packaging : Reel
Configuration : Single
Maximum Operating Temperature : + 150 C
Collector- Emitter Voltage VCEO Max : 30 V
Emitter- Base Voltage VEBO : 10 V
Maximum Collector Cut-off Current : 0.1 uA
Collector- Base Voltage VCBO : 30 V
Maximum DC Collector Current : 0.3 A
Package / Case : SC-59
Power Dissipation : 0.2 W


Specifications

  Connection Diagram


Description

The 2SD2142KT146 is one member of the 2SD2142 family which is designed as the high-gain amplifier transistor (30V, 0.3A) device that has two points of features: (1)Darlington connection for a high hFE; (2)(DC current gain = 5000 (Min.) at VCE = 3V, IC = 10mA) High input impedance.

The absolute maximum ratings of the 2SD2142KT146 can be summarized as:(1)Collector-base voltage: 30 V;(2)Collector-emitter voltage: 30 V;(3)Emitter-base voltage: 10 V;(4)Collector current: 0.3 A;(5)Collector power dissipation: 0.2 W;(6)Junction temperature: 150 ;(7)Storage temperature: -55 to +150 .

The electrical characteristics of 2SD2142KT146 can be summarized as:(1)Collector-base breakdown voltage: 30 V;(2)Collector-emitter breakdown voltage: 30 V;(3)Emitter-base breakdown voltage: 10 V;(4)Collector cutoff current: 0.1 uA;(5)Emitter cutoff current: 0.1 uA;(6)DC current transfer ratio: 5000 or 10000;(7)Collector-emitter saturation voltage: 1.5 V;(8)Base-emitter voltage: 2 V;(9)Transition frequency: 200 MHz;(10)Output capacitance: 5.4 pF. If you want to know more information about the 2SD2142KT146, please download the datasheet in www.seekic.com or www.chinaicmart.com.




Parameters:

Technical/Catalog Information2SD2142KT146
VendorRohm Semiconductor(VA)
CategoryDiscrete Semiconductor Products
Transistor TypeNPN - Darlington
Voltage - Collector Emitter Breakdown (Max)32V
Current - Collector (Ic) (Max)300mA
Power - Max200mW
DC Current Gain (hFE) (Min) @ Ic, Vce5000 @ 100mA, 3V
Vce Saturation (Max) @ Ib, Ic1.4V @ 200A, 200mA
Frequency - Transition200MHz
Current - Collector Cutoff (Max)-
Mounting TypeSurface Mount
Package / CaseSC-59-3, SMT3, SOT-346, TO-236
PackagingDigi-Reel?
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names 2SD2142KT146
2SD2142KT146
2SD2142KT146DKR ND
2SD2142KT146DKRND
2SD2142KT146DKR



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