DescriptionThe 2SD2136 is a type of power transistor, which is silicon PNP triple-diffused planar type. Power amplifier compleme ntary pair with 2SB1416.Features of 2SD2136 are:(1)high DC current gain and good linearity; (2)low collector-emitt er saturation voltage; (3)automatic mounting by radial...
2SD2136: DescriptionThe 2SD2136 is a type of power transistor, which is silicon PNP triple-diffused planar type. Power amplifier compleme ntary pair with 2SB1416.Features of 2SD2136 are:(1)high DC current ga...
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The 2SD2136 is a type of power transistor, which is silicon PNP triple-diffused planar type. Power amplifier compleme ntary pair with 2SB1416.Features of 2SD2136 are:(1)high DC current gain and good linearity; (2)low collector-emitt er saturation voltage; (3)automatic mounting by radial taping is possible.
The absolute maximum ratings and electrical characteristics(Tc=25) of the 2SD2136 can be summarized as: (1)colle ctor-base voltage: 60V; (2)collector-emitter voltage: 60V; (3)emitter-base voltage: 6V; (4)peak collector current: 5A; (5):collector current: 3A; (6)collector power dissipation: 1.5W; (7)junction temperature: 150; (8)storage temperature: -55 to 150. Electrical characteristics: (1)collect cutoff current(VCE=60V, VBE=0): 200uA max; (2)emitter cutoff current(VEB=6V, IC=0): 1mA; (3): collector-emitter voltage(IC=30mA, IB=0): 60V min; (4)DC current gain(VCE=4V, IC=1A): 40min and 250max; (5)base-emitter voltage(VCE=4V, IC=3A): 1.8V max; (6)collector-emitter saturation vol tage(IC=3A, IB=0.375A): 1.2V max; (7)collect current fall time(IC=1A, IB1=0.1A, IB2=-0.1A): 0.4us typ; (8)turn-on time(IC=1A, IB1=0.1A, IB2=-0.1A): 0.5us typ, etc.