DescriptionThe 2SD2134 is a type of power transistor, which is silicon PNP epitaxial planar type. AF drive, high power amplifier comolementary pair with 2SB1414.Features of 2SD2134 are:(1)very good linearity of DC current gain; (2)high trans ition frequency; (3)optimum for the driver of 60~100W in...
2SD2134: DescriptionThe 2SD2134 is a type of power transistor, which is silicon PNP epitaxial planar type. AF drive, high power amplifier comolementary pair with 2SB1414.Features of 2SD2134 are:(1)very good ...
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The 2SD2134 is a type of power transistor, which is silicon PNP epitaxial planar type. AF drive, high power amplifier comolementary pair with 2SB1414.Features of 2SD2134 are:(1)very good linearity of DC current gain; (2)high trans ition frequency; (3)optimum for the driver of 60~100W in complementaty pair with 2SB1414.
The absolute maximum ratings and electrical characteristics(Tc=25) of the 2SD2134 can be summarized as: (1)colle ctor-base voltage: 180V; (2)collector-emitter voltage: 180V; (3)emitter-base voltage: 5V; (4)peak collector current: 1.5A; (5):collector current: 1A; (6)collector power dissipation: 1.5W; (7)junction temperature: 150; (8)storage tem perature: -55 to 150. Electrical characteristics: (1)collector-emitter voltage(IC=100uA): 180V min; (2)emitter-base voltage(IE=10uA, IC=0): 5V min;(3)DC current gain(VCE=10V, IC=150mA): 90min, 160 typ and 330 max; (4)collector-emitter saturation voltage(IC=500mA, IB=50mA): 0.5V typ and 2V max; (5):base-emitter saturation volage(IC=500mA, IB=50mA): 1V typ and 2V max; (6)transition frequency(VCB=10V, IE=-50mA, f=200MHz): 200MHz typ; (7)collector output capacitance(VCB=10V, IE=0, f=1MHz): 20pF, etc.