2SD2131

The 2SD2131 is a kind of transistor. It is silicon NPN triple diffused type (darlington). It is intended for high power switching applications and hammer drive, pulse motor drive applications. It has some features: (1)high DC current gain: hFE=2000 (min) (VCE=3 V, IC=3 A); (2)low saturation voltage: VCE(sat)=1.5 V (max) (IC=3 A); (3)zener diode included between collector and base; (4)unclamped inductive load energy: E=150 mJ (min).

What comes next is the absolute maximum ratings of 2SD2131(Ta=25): (1)collector-base voltage, VCBO: 60±10 V; (2)collector-emitter voltage, VCEO: 60±10 V; (3)emitter-base voltage, VEBO: 7 V; (4)collector current, DC, IC: 5 A; (5)collector current, pulse, ICP: 8 A ; (6)base current, IB: 0.5 A ; (7)collector power dissipation, PC: 2.0 W at Ta=25 and 30 W at Tc=25; (8)junction temperature, Tj: 150; (9)storage temperature range, Tstg: -55 to 150.

The following is the electrical characteristics of 2SD2131(Ta=25): (1)collector cutoff current, ICBO: 10A max at VCB=45 V, IE=0; (2)collector cutoff current, ICEO: 10A max at VCB=45 V, IB=0; (3)emitter cutoff current, IEBO: 2.5 mA max at VEB=6 V, IC=0; (3)collector-base breakdown voltage, V(BR)CBO: 50 V min, 60 V typ and 70 V max at IC=1 mA, IE=0; (4)collector-emitter breakdown voltage, V(BR)CEO: 50 V min, 60 V typ and 70 V max at IC=10 mA, IB=0; (6)DC current gain, hFE: 2000 min and 15000 max at VCE=3 V, IC=3 A; 1000 min at VCE=3 V, IC=3 A; (7)collector-emitter saturation voltage, VCE(sat): 1.1 V typ and 1.5 V max at IC=3 A, IB=6 mA; 1.3 V typ and 2.5 V max at IC=5 A, IB=200 mA; (8)base-emitter saturation voltage, VBE(sat): 1.7 V typ and 2.5 V max at IC=3 A, IB=6 mA.