2SD2130

The 2SD2130 is a kind of transistor. It is silicon NPN epitaxial type. It is intended for micro motor drive, hammer drive applications, switching applications and power amplifier applications. It has some features: (1)high DC current gain: hFE=2000 (min) (VCE=2 V, IC=1 A); (2)low saturation voltage: VCE(sat)=1.5 V (max) (IC=3 A, IB=10 mA); (3) zener diode included between collector and base.

What comes next is the absolute maximum ratings of 2SD2130(Ta=25): (1)collector-base voltage, VCBO: 60±10 V; (2)collector-emitter voltage, VCEO: 60±10 V; (3)emitter-base voltage, VEBO: 6 V; (4)collector current, DC, IC: ±4 A; (5)collector current, pulse, ICP: ±6 A ; (6)base current, IB: 0.5 A ; (7)collector power dissipation, PC: 1.5 W at Ta=25 and 10 W at Tc=25; (8)junction temperature, Tj: 150; (9)storage temperature range, Tstg: -55 to 150.

The following is the electrical characteristics of 2SD2130(Ta=25): (1)collector cutoff current, ICBO: 10A max at VCB=45 V, IE=0; (2)emitter cutoff current, IEBO: 0.6 mA min and 2.0 mA max at VEB=6 V, IC=0; (3)collector-base breakdown voltage, V(BR)CBO: 50 V min, 60 V typ and 70 V max at IC=10 mA, IE=0; (4)collector-emitter breakdown voltage, V(BR)CEO: 50 V min, 60 V typ and 70 V max at IC=10 mA, IB=0; (5)emitter-base breakdown voltage, V(BR)EBO: 6 V min at IE=10 mA, IC=0; (6)DC current gain, hFE: 2000 min and 15000 max at VCE=2 V, IC=1 A; 1000 min at VCE=2 V, IC=3 A; (7)collector-emitter saturation voltage, VCE(sat): 1.5 V max at IC=3 A, IB=10 mA; (8)base-emitter saturation voltage, VBE(sat): 2.0 V max at IC=3 A, IB=10 mA; (9)transition frequency, fT: 60 MHz typ at VCE=2 V, IC=0.5 A; (10)collector output capacitance, Cob: 30 pF typ at VCB=10 V, IE=0, f=1 MHz.