2SD2129

The 2SD2129 is a kind of transistor. It is silicon NPN epitaxial type. It is intended for high power switching applications and hammer drive, pulse motor drive applications. It has some features: (1)high DC current gain: hFE=2000 (min); (2)low collector saturation voltage: VCE(sat)=1.5 V (max).

What comes next is the absolute maximum ratings of 2SD2129(Ta=25): (1)collector-base voltage, VCBO: 100 V; (2)collector-emitter voltage, VCEO: 100 V; (3)emitter-base voltage, VEBO: 7 V; (4)collector current, DC, IC: 3 A; (5)collector current, pulse, ICP: 5 A ; (6)base current, IB: 1 A ; (7)collector power dissipation, PC: 2.0 W at Ta=25 and 20 W at Tc=25; (8)junction temperature, Tj: 150; (9)storage temperature range, Tstg: -55 to 150.

The following is the electrical characteristics of 2SD2129(Ta=25): (1)collector cutoff current, ICBO: 100A max at VCB=100 V, IE=0; (2)emitter cutoff current, IEBO: 2.5 mA max at VEB=6 V, IC=0; (3)collector-emitter breakdown voltage, V(BR)CEO: 100 V min at IC=30 mA, IB=0; (4)DC current gain, hFE: 2000 min and 15000 max at VCE=3 V, IC=1.5 A; 1000 min at VCE=3 V, IC=3 A; (5)collector-emitter saturation voltage, VCE(sat): 1.5 V max at IC=1.5 A, IB=3 mA and 2.0 V max at IC=3 A, IB=12 mA; (6)base-emitter saturation voltage, VBE(sat): 2.0 V max at IC=1.5 A, IB=3 mA.