2SD2127

The 2SD2127 is a kind of transistor. It is silicon NPN epitaxial type. 2SD2127 is intended for switching applications and lamp, solenoid drive applications. It has some features: (1)high DC current gain: hFE(1)=500 to 1500; (2)low collector saturation voltage: VCE(sat)=0.3 V (max); (3)zener diode included between collector and base.

What comes next is the absolute maximum ratings of 2SD2127(Ta=25): (1)collector-base voltage, VCBO: 60±10 V; (2)collector-emitter voltage, VCEO: 60±10 V; (3)emitter-base voltage, VEBO: 7 V; (4)collector current, DC, IC: 3 A; (5)collector current, pulse, ICP: 5 A ; (6)base current, IB: 1 A ; (7)collector power dissipation, PC: 2.0 W at Ta=25 and 25 W at Tc=25; (8)junction temperature, Tj: 150; (9)storage temperature range, Tstg: -55 to 150.

The following is the electrical characteristics of 2SD2127(Ta=25): (1)collector cutoff current, ICBO: 10A max at VCB=45 V, IE=0; (2)emitter cutoff current, IEBO: 10A max at VEB=7 V, IC=0; (3)collector-emitter breakdown voltage, V(BR)CEO: 50 V min, 60 V typ and 70 V max at IC=50 mA, IB=0; (4)DC current gain, hFE: 500 min and 1500 max at VCE=1 V, IC=0.5 A; 150 min at VCE=1 V, IC=1 A; (5)collector-emitter saturation voltage, VCE(sat): 0.3 V max at IC=1 A, IB=10 mA; (6)base-emitter voltage, VBE: 1.2 V max at IC=1 A, IB=10 mA; (7)transition frequency, fT: 140 MHz typ at VCE=5 V, IC=0.5 A; (8)collector output capacitance, Cob: 30 pF typ at VCB=10 V, IE=0, f=1 MHz.