Features: ·Low VCE(sat).·Excellent DC current gain characteristics.·NPN silicon transistor.Specifications Parameter Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 20 V Emitter-base voltage VEBO 6 V Collector current IC 5 A(DC) ...
2SD2118: Features: ·Low VCE(sat).·Excellent DC current gain characteristics.·NPN silicon transistor.Specifications Parameter Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-e...
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Parameter |
Symbol | Rating | Unit |
Collector-base voltage | VCBO | 50 | V |
Collector-emitter voltage | VCEO | 20 | V |
Emitter-base voltage | VEBO | 6 | V |
Collector current | IC | 5 | A(DC) |
10 | A(Pulse)* | ||
Collector current (pulse) * | ICP | 10 | A |
Collector power dissipation TC = 25 |
PC | 1 | W |
10 | W | ||
Junction temperature | Tj | 150 | |
Storage temperature | Tstg | -55 to +150 |