2SD2114KVLT1G

The 2SD2114KVLT1G is one member of the 2SD2114 family which is designed as the epitaxial planar type NPN silicon transistor device that has some points of features:(1)High DC current gain: hFE = 1200 (Typ.); (2)High emitter-base voltage: VEBO =12V (Min.); (3)Low VCE(sat): VCE (sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA); (4)Pb-Free package is available.

The absolute maximum ratings of the 2SD2114KVLT1G can be summarized as:(1)Collector-base voltage: 25 V;(2)Collector-emitter voltage: 20 V;(3)Emitter-base voltage: 12 V;(4)Collector current: 0.5 or 1 A;(5)Collector power dissipation: 0.2 W;(6)Junction temperature: 150 ;(7)Storage temperature: -55 to +150 .

The electrical characteristics of 2SD2114KVLT1G can be summarized as:(1)Collector-base breakdown voltage: 25 V;(2)Collector-emitter breakdown voltage: 20 V;(3)Emitter-base breakdown voltage: 12 V;(4)Collector cutoff current: 0.5 uA;(5)Emitter cutoff current: 0.5 uA;(6)Collector-emitter saturation voltage: 0.18 V to 0.4 V;(7)DC current transfer ratio: 820 to 2700;(8)Transition frequency: 350 MHz;(9)Output capacitance: 8.0 pF;(10)Output On-resistance: 0.8 pF. If you want to know more information about the 2SD2114KVLT1G, please download the datasheet in www.seekic.com or www.chinaicmart.com.