2SD2114KT146V

Transistors Bipolar (BJT) NPN 20V 0.5A

product image

2SD2114KT146V Picture
SeekIC No. : 00206623 Detail

2SD2114KT146V: Transistors Bipolar (BJT) NPN 20V 0.5A

floor Price/Ceiling Price

US $ .07~.26 / Piece | Get Latest Price
Part Number:
2SD2114KT146V
Mfg:
ROHM Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~500
  • Unit Price
  • $.26
  • $.17
  • $.12
  • $.07
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/21

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : NPN Collector- Emitter Voltage VCEO Max : 20 V
Emitter- Base Voltage VEBO : 12 V Maximum DC Collector Current : 1 A
DC Collector/Base Gain hfe Min : 820 Configuration : Single
Maximum Operating Frequency : 350 MHz Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT Package / Case : SC-59
Packaging : Reel    

Description

Transistor Polarity : NPN
Collector- Emitter Voltage VCEO Max : 20 V
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Packaging : Reel
Package / Case : SC-59
Maximum DC Collector Current : 1 A
Emitter- Base Voltage VEBO : 12 V
Maximum Operating Frequency : 350 MHz
DC Collector/Base Gain hfe Min : 820


Description

The 2SD2114KT146V is one member of the 2SD2114 family which is designed as the epitaxial planar type NPN silicon transistor device that has some points of features:(1)High DC current gain: hFE = 1200 (Typ.); (2)High emitter-base voltage: VEBO =12V (Min.); (3)Low VCE(sat): VCE (sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA); (4)Pb-Free package is available.

The absolute maximum ratings of the 2SD2114KT146V can be summarized as:(1)Collector-base voltage: 25 V;(2)Collector-emitter voltage: 20 V;(3)Emitter-base voltage: 12 V;(4)Collector current: 0.5 or 1 A;(5)Collector power dissipation: 0.2 W;(6)Junction temperature: 150 ;(7)Storage temperature: -55 to +150 .

The electrical characteristics of 2SD2114KT146V can be summarized as:(1)Collector-base breakdown voltage: 25 V;(2)Collector-emitter breakdown voltage: 20 V;(3)Emitter-base breakdown voltage: 12 V;(4)Collector cutoff current: 0.5 uA;(5)Emitter cutoff current: 0.5 uA;(6)Collector-emitter saturation voltage: 0.18 V to 0.4 V;(7)DC current transfer ratio: 820 to 2700;(8)Transition frequency: 350 MHz;(9)Output capacitance: 8.0 pF;(10)Output On-resistance: 0.8 pF. If you want to know more information about the 2SD2114KT146V, please download the datasheet in www.seekic.com or www.chinaicmart.com.




Parameters:

Technical/Catalog Information2SD2114KT146V
VendorRohm Semiconductor(VA)
CategoryDiscrete Semiconductor Products
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)20V
Current - Collector (Ic) (Max)500mA
Power - Max200mW
DC Current Gain (hFE) (Min) @ Ic, Vce820 @ 10mA, 3V
Vce Saturation (Max) @ Ib, Ic400mV @ 20mA, 50mA
Frequency - Transition350MHz
Current - Collector Cutoff (Max)-
Mounting TypeSurface Mount
Package / CaseSC-59-3, SMT3, SOT-346, TO-236
PackagingDigi-Reel?
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names 2SD2114KT146V
2SD2114KT146V
2SD2114KT146VDKR ND
2SD2114KT146VDKRND
2SD2114KT146VDKR



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Line Protection, Backups
RF and RFID
Isolators
Computers, Office - Components, Accessories
Transformers
Programmers, Development Systems
View more