2SD2098R

The 2SD2098R is designed as one kind of low VCE(sat) transistor that has three points of features:(1)low saturation voltage, typically VCE(sat)=0.25V at Ic/IB=4A / 0.1A;(2)excellent DC current gain characteristics;(3)wide SOA (safe operating area). And the structure of this device is epitaxial planar type NPN silicon transistor. The absolute maximum ratings of the 2SD2098R can be summarized as:(1)collector-base voltage: 50 V;(2)collector-emitter voltage: 20 V;(3)emitter-base voltage: 6 V;(4)collector current: 5 A or 10 A;(4)junction temperature:150;(5)storage temperature:-55 to +150.

And the electrical characteristics of the 2SD2098R can be summarized as:(1)collector-base breakdown voltage: 50 V;(2)collector-emitter breakdown voltage: 20 V;(3)emitter cutoff current: 0.5 uA;(4)collector-emitter saturation voltage: 0.25 V;(5)DC current transfer ratio: 120 to 390;(6)transition frequency: 150 MHz;(7)output capacitance: 30 pF. If you want to know more information such as the electrical characteristics about the 2SD2098R, please download the datasheet in www.seekic.com or www.chinaicmart.com.